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  ? 2004 ixys all rights reserved 1 - 2 dsei 60-06a dsei 60-06at 435 ixys reserves the right to change limits, test conditions and dimensions features ? international standard package jedec to-247 ad  planar passivated chips  very short recovery time  extremely low switching losses  low i rm -values  soft recovery behaviour  epoxy meets ul 94v-0 applications  antiparallel diode for high frequency switching devices  anti saturation diode  snubber diode  free wheeling diode in converters and motor control circuits  rectifiers in switch mode power supplies (smps)  inductive heating and melting  uninterruptible power supplies (ups)  ultrasonic cleaners and welders advantages  high reliability circuit operation  low voltage peaks for reduced protection circuits  low noise switching  low losses  operating at lower temperature or space saving by reduced cooling fast recovery epitaxial diode (fred) to-247 ad c a a = anode, c = cathode symbol conditions maximum ratings i frms t vj = t vjm 100 a i favm t c = 70c; rectangular, d = 0.5 60 a i frm t p < 10 s; rep. rating, pulse width limited by t vjm 800 a i fsm t vj = 45c; t = 10 ms (50 hz), sine 550 a t = 8.3 ms (60 hz), sine 600 a t vj = 150c;t = 10 ms (50 hz), sine 480 a t = 8.3 ms (60 hz), sine 520 a i 2 t t vj = 45c t = 10 ms (50 hz), sine 1510 a 2 s t = 8.3 ms (60 hz), sine 1490 a 2 s t vj = 150c;t = 10 ms (50 hz), sine 1150 a 2 s t = 8.3 ms (60 hz), sine 1120 a 2 s t vj -40...+150 c t vjm 150 c t stg -40...+150 c p tot t c = 25c 166 w m d mounting torque 0.8...1.2 nm weight 6g i favm rating includes reverse blocking losses at t vjm , v r = 0.8 v rrm , duty cycle d = 0.5 data according to iec 60747 symbol conditions characteristic values typ. max. i r t vj = 25c; v r = v rrm 200 a t vj = 25c; v r = 0.8  v rrm 100 a t vj = 125c; v r = 0.8  v rrm 14 ma v f i f = 16 a; t vj = 150c 1.5 v t vj = 25c 1.8 v v t0 for power-loss calculations only 1.13 v r t t vj = t vjm 4.7 m ? r thjc 0.75 k/w r thch (version a) 0.25 k/w t rr i f = 1 a; -di/dt = 200 a/s; v r = 30 v; t vj = 25c 35 50 ns i rm v r = 350 v; i f = 60 a; -di f /dt = 480 a/s 4 4.4 a l 0.05 h; t vj = 100c ac v rrm = 600 v i favm = 60 a t rr = 35 ns v rsm v rrm type v v 600 600 dsei 60-06a 600 600 dsei 60-06at c to-268 aa (at type) a a c
? 2004 ixys all rights reserved 2 - 2 dsei 60-06a dsei 60-06at 435 ixys reserves the right to change limits, test conditions and dimensions fig. 1 forward current fig. 2 recovery charge versus -di f /dt. fig. 3 peak reverse current versus versus voltage drop. -di f /dt. fig. 4 dynamic parameters versus fig. 5 recovery time versus -di f /dt. fig. 6 peak forward voltage junction temperature. versus di f /dt. fig. 7 transient thermal impedance junction to case. dimensions dim. millimeter inches min. max. min. max. a 4..32 4.83 0.170 0.190 b 0.64 1.02 0.025 0.040 b1 1.15 1.65 0.045 0.065 c 0.35 0.56 0.014 0.022 d 14.73 16.00 0.580 0.630 e 9.91 10.66 0.390 0.420 e 2.54 bsc 0.100 bsc f 1.14 1.40 0.045 0.055 h1 5.85 6.85 0.230 0.270 j1 2.29 2.79 0.090 0.110 k 0 0.38 0 0.015 l 12.70 13.97 0.500 0.550 l1 2.79 5.84 0.110 0.230 ?p 3.53 4.08 0.139 0.161 q 2.54 3.18 0.100 0.125


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